From f2c6e3b007ec3a020b2c864c4fab35dc489849ec Mon Sep 17 00:00:00 2001 From: Rik Snel Date: Mon, 29 Jul 2019 09:21:37 +0200 Subject: [PATCH] mtd: samsung: Disable subpage writes on E-die NAND Samsung E-die SLC NAND manufactured using 21nm process (K9F1G08U0E) does not support partial page programming, so disable subpage writes for it. Manufacturing process is stored in lowest two bits of 5th ID byte. Orignal patch created by Ladislav Michl: http://lists.infradead.org/pipermail/linux-mtd/2018-January/078664.html Signed-off-by: Rik Snel --- ...Disable_subpage_writes_on_E-die_NAND.patch | 26 +++++++++++++++++++ 1 file changed, 26 insertions(+) create mode 100644 target/linux/generic/pending-4.14/452-mtd:_nand:_samsung:_Disable_subpage_writes_on_E-die_NAND.patch diff --git a/target/linux/generic/pending-4.14/452-mtd:_nand:_samsung:_Disable_subpage_writes_on_E-die_NAND.patch b/target/linux/generic/pending-4.14/452-mtd:_nand:_samsung:_Disable_subpage_writes_on_E-die_NAND.patch new file mode 100644 index 0000000000..1e3ab5204c --- /dev/null +++ b/target/linux/generic/pending-4.14/452-mtd:_nand:_samsung:_Disable_subpage_writes_on_E-die_NAND.patch @@ -0,0 +1,25 @@ +--- a/drivers/mtd/nand/nand_samsung.c ++++ b/drivers/mtd/nand/nand_samsung.c +@@ -91,6 +91,23 @@ static void samsung_nand_decode_id(struc + } + } else { + nand_decode_ext_id(chip); ++ if (nand_is_slc(chip)) { ++ switch (chip->id.data[1]) { ++ /* K9F4G08U0D-S[I|C]B0(T00) */ ++ case 0xDC: ++ chip->ecc_step_ds = 512; ++ chip->ecc_strength_ds = 1; ++ break; ++ /* K9F1G08U0E 21nm chips do not support subpage write */ ++ case 0xF1: ++ if (chip->id.len > 4 && ++ (chip->id.data[4] & GENMASK(1,0)) == 0x1) ++ chip->options |= NAND_NO_SUBPAGE_WRITE; ++ break; ++ default: ++ break; ++ } ++ } + } + } -- 2.20.1